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參數(shù)資料
| 型號： | VN0300L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓30V，夾斷電流0.64A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓30V的，夾斷電流0.64A的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | VN0300L |
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
2
Document Number: 70199
S-58620—Rev. D, 21-Jun-99
Limits
TN0201L
TN0401L
VN0300L
VN0300LS
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
D i S
Drain-Source Breakdown Voltage
V l
V
(BR)DSS
V
GS
= 0 V
I
D
TN0201L
55
20
V
TN0401L
55
40
30
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA
1.4
0.5
2
V
DS
= V
GS
, I
D
= 1 mA
1.5
0.8
2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
nA
V
DS
= 0 V, V
GS
=
30 V
100
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
T
J
= 125 C
500
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
1
T
J
= 125 C
100
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
0.9
0.25
A
V
DS
= 10 V, V
GS
= 10 V
3.5
1
1
D i S
Drain-Source On-Resistance
O R
O R
b
V
GS
= 3.5 V, I
D
= 0.05 A
1.8
4
V
GS
= 5 V, I
D
= 0.3 A
1.2
3.3
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.25 A
1.4
2
T
J
= 125 C
2.6
4
V
GS
= 10 V, I
D
= 1 A
0.85
1.2
1.2
T
J
= 125 C
1.6
2.4
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
500
200
200
mS
Dynamic
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
15 V V
0 V f
38
60
100
Output Capacitance
C
oss
33
50
95
pF
Reverse Transfer Capacitance
C
rss
8
15
25
Switching
c
Turn-On Time
t
ON
V
DD
= 15 V, R
L
= 14
I
D
1 A, V
= 10 V
R
G
= 25
10
30
30
ns
Turn-Off Time
t
OFF
13
30
30
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ03
2%.
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PDF描述 |
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| VN0300 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN0300D | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN0300 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓30V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN0300L P002 | 制造商:Supertex Inc 功能描述: |
| VN0300L/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
| VN0300L-G | 功能描述:MOSFET 30V 1.2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0300L-G P002 | 制造商:Supertex Inc. 功能描述:MOSFET 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0300L-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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