- 您現(xiàn)在的位置：買賣IC網 > PDF目錄359397 > VN0300 (ELAN Microelctronics Corp .) N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓30V,N溝道增強型垂直DMOS結構場效應管) PDF資料下載
參數(shù)資料
| 型號： | VN0300 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓30V,N溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（擊穿電壓30V的，?溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | VN0300 |
7-159
VN0300
Package Options
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
TO-92
Ordering Information
Order Number / Package
BV
DSS
/
BV
DGS
30V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
1.2
1.0A
VN0300L
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows
and Ordering Information.
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
30V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
S G D
相關PDF資料 |
PDF描述 |
|---|---|
| VN0335N1 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN0335N5 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN0335ND | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN0355N5 | TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 1.5A I(D) | TO-220AB |
| VN0360N2 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | TO-39 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VN0300B | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS Power FETs??? |
| VN0300D | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS Power FETs??? |
| VN0300L | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0300L P002 | 制造商:Supertex Inc 功能描述: |
| VN0300L/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
發(fā)布緊急采購，3分鐘左右您將得到回復。