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參數(shù)資料
| 型號： | VN01506NW |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET |
| 中文描述： | 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 25K |
| 代理商： | VN01506NW |
VN1506/VN1509
Switching Waveforms and Test Circuit
Symbol
BV
DSS
Parameter
Min
Typ
Max
Unit
Conditions
VN1509
90
VN1506
60
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
0.8
2.4
-5.5
100
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 250mA
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 0.5A
-3.8
mV/°C
nA
1
100
μA
I
D(ON)
ON-State Drain Current
0.5
2.0
1.0
2.5
3.0
2.5
0.70
450
55
20
R
DS(ON)
5.0
3.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
1
%/°C
m
300
65
25
8
5
8
9
8
1.8
pF
5
3
5
6
5
1.2
400
V
ns
V
GS
= 0V, I
SD
=1.0A
V
GS
= 0V, I
SD
=1.0A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 1mA
Drain-to-Source
Breakdown Voltage
Electrical Characteristics
(@ 25°C unless otherwise specified)
V
DD
= 25V
I
D
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
03/26/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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