參數(shù)資料
型號(hào): VN01506NW
廠商: SUPERTEX INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: N-Channel Enhancement-Mode Vertical DMOS FET
中文描述: 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: DIE
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 25K
代理商: VN01506NW
03/26/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
J
Motor controls
J
Converters
J
Amplifiers
J
Switches
J
Power supply circuits
J
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
J
Free from secondary breakdown
J
Low power drive requirement
J
Ease of paralleling
J
Low C
ISS
and fast switching speeds
J
Excellent thermal stability
J
Integral Source-Drain diode
J
High input impedance and high gain
J
Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
± 20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300°C
VN1506
VN1509
Order Number / Package
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
I
D(ON)
(min)
Die
3.0
3.0
2.0A
VN01506NW
90V
2.0A
VN1509NW
MIL visual screening available.
Ordering Information
N-Channel Enhancement-Mode
Vertical DMOS FET
相關(guān)PDF資料
PDF描述
VN0210N2 N-Channel Enhancement-Mode Vertical DMOS Power FETs
VN0210N3 N-Channel Enhancement-Mode Vertical DMOS Power FETs
VN0210N5 N-Channel Enhancement-Mode Vertical DMOS Power FETs
VN0216N2 N-Channel Enhancement-Mode Vertical DMOS Power FETs
VN0216N3 N-Channel Enhancement-Mode Vertical DMOS Power FETs
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