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參數(shù)資料
| 型號： | VLB10-12F |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic:2.0 A,Vcbo: 36 V,Vceo: 18 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:2.0 A,Vcbo: 36 V,Vceo: 18 V,Vces: 36V,Vebo: 4.0 V)) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.380 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | VLB10-12F |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 15 mA
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 2.5 mA
I
CBO
V
CB
= 12.5 V
h
FE
V
CE
= 5.0 V I
C
= 250 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5.0
UNITS
V
V
V
mA
---
1.0
200
C
OB
V
CB
= 12.5 V f = 1.0 MHz
65
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 10 W f = 50 MHz
16
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VLB10-12F
DESCRIPTION:
The
ASI VLB10-12F
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
2.0 A
V
CBO
36 V
V
CEO
18 V
V
CES
36 V
V
EBO
4.0 V
P
DISS
20 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
5.0
O
C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10732
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
.280 / 7.11
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.720 / 18.29
.730 / 18.54
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