參數(shù)資料
型號: VII50-12P1
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: IGBT Modules
中文描述: 49 A, 1200 V, N-CHANNEL IGBT
封裝: ECOPAC-12
文件頁數(shù): 1/4頁
文件大小: 144K
代理商: VII50-12P1
2003 IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
50-12P1
VID
50-12P1
VII
50-12P1
VIO
50-12P1
3
B3
I
C25
V
CES
V
CE(sat) typ.
= 3.1 V
= 49 A
= 1200 V
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
± 20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
49
33
A
A
I
CM
V
CEK
V
= ±15 V; R
= 47
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
50
V
CES
A
t
(SCSOA)
V
= V
; V
GE
= ±15 V; R
G
= 47
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
208
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
3.1
3.5
3.7
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25°C
T
VJ
= 125°C
1.1
4.2
mA
mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
180
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
100
70
500
70
4.6
3.4
ns
ns
ns
ns
mJ
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
1.65
nF
R
thJC
R
thJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 μm)
0.6 K/W
1.2
K/W
Inductive load, T
= 125°C
V
CE
= 600 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 47
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
VDI
X15
X16
NTC
A
P
I
L9
T16
Preliminary data sheet
Pin arangement see outlines
VII
O
G
V
L9
E2
K10
X16
X13
X15
NTC
VID
I
S
A
L9
F1
X15
X16
NTC
Features
NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
space and weight savings
reduced protection circuits
leads with expansion bend for stress relief
Typical Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
VIO
J
L
A
S
相關(guān)PDF資料
PDF描述
VINCENT CIGAR LIGHTER ADAPTER
VIO500-12S TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 600A I(C)
VIO600-12S TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 600A I(C)
VIPER100(022Y)
VIPER50A(022Y)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VII50-12S1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 73A I(C)
VII50-12S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 50A I(C)
VII75-06P1 功能描述:MOD IGBT PHASE LEG 600V ECOPAC2 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
VII75-12G3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 75A I(C)
VII75-12P1 功能描述:MOD IGBT PHASE LEG 1200V ECOPAC2 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B