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參數(shù)資料
| 型號(hào)： | VHB1-12T |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 16K |
| 代理商： | VHB1-12T |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 5.0 mA
BV
CER
I
C
= 5.0 mA
BV
EBO
I
E
= 100
μ
A
I
CEO
V
CE
= 12 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
V
CE(SAT)
I
C
= 100 mA I
B
= 20 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
20
40
2.0
10
UNITS
V
V
V
mA
---
Vdc
R
BE
= 10
0.2
200
0.5
C
OB
V
CB
= 12.5 V f = 1.0 MHz
4.0
pF
P
G
η
C
V
CE
= 12.5 V P
OUT
= 1.0 W f = 175 MHz
10
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VHB1-12T
DESCRIPTION:
The
ASI VHB1-12T
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
400 mA
(MAX)
V
CBO
40 V
V
CEO
20 V
V
CER
40 V
V
EBO
2.0 V
P
DISS
3.5 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +200
O
C
θ
JC
20
O
C/W
PACKAGE STYLE TO-39
ORDER CODE: ASI10711
A
D
45°
C
B
F
E
G
H
MINIMUM
inches / mm
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.200 / 5.080
.240 / 6.100
B
C
D
E
F
G
H
A
MAXIMUM
inches / mm
.034 / 0.860
.335 / 8.500
.260 / 6.600
.370 / 9.370
.045 / 1.140
.500 / 12.700
.016 / 0.407
.020 / 0.508
DIM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VHB1-12T_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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| VHB1-28T | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| VHB1-28T_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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