參數(shù)資料
型號: VHB10-12F
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.380 INCH, FM-4
文件頁數(shù): 1/1頁
文件大小: 17K
代理商: VHB10-12F
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 15 mA
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 2.5 mA
I
CBO
V
CB
= 12.5 V
h
FE
V
CE
= 5.0 V I
C
= 250 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5.0
UNITS
V
V
V
mA
---
1.0
200
C
OB
V
CB
= 12.5 V f = 1.0 MHz
45
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 10 W f = 175 MHz
10
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VHB10-12F
DESCRIPTION:
The
ASI VHB10-12F
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
2.0 A
V
CBO
36 V
V
CEO
18 V
V
CES
36 V
V
EBO
4.0 V
P
DISS
20 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
8.8
O
C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10712
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
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