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參數(shù)資料
| 型號： | VEMT3700-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Photo Transistor, PHOTO TRANSISTOR DETECTOR, 3.50 X 2.80 MM, 1.75 MM HEIGHT, ROHS COMPLIANT, MINIATURE, PLASTIC, LCC-2 |
| 中文描述： | Photodetector Transistors 60 Degree 100mW 70 Volt 50mA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 121K |
| 代理商： | VEMT3700-GS08 |
Document Number: 81478
Rev. 1.6, 14-Jul-10
For technical questions, contact:
detectortechsupport@vishay.com
www.vishay.com
3
VEMT3700
Silicon NPN Phototransistor
Vishay Semiconductors
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
0.01
0.1
1
0.001
0.01
0.1
1
10
I
c
E
e
- Irradiance (mW/cm2)
10
94 8316
V
= 5 V
λ
= 950 nm
0.1
1
10
0.1
1
10
I
c
V
CE
- Collector Emitter Voltage (V)
100
94 8317
E
e
= 1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
λ
= 950 nm
0.1
10
1
0
2
4
6
8
10
100
f = 1 MHz
C
C
V
CE
- Collector Emitter Voltage (V)
94 8294
0
0
2
4
6
8
10
12
14
2
8
6
4
V
CE
= 5 V
R
= 100
Ω
λ
= 950 nm
t
off
t
on
I
C
- Collector Current (mA)
t
o
/
o
94 8293
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
λ
)
r
λ
- Wavelength (nm)
94 8348
800
0.4
0.2
0
S
r
94 8318
0.6
0.9
0.8
0°
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
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