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參數(shù)資料
| 型號： | VEMT3700-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Photo Transistor, PHOTO TRANSISTOR DETECTOR, 3.50 X 2.80 MM, 1.75 MM HEIGHT, ROHS COMPLIANT, MINIATURE, PLASTIC, LCC-2 |
| 中文描述： | Photodetector Transistors 60 Degree 100mW 70 Volt 50mA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 121K |
| 代理商： | VEMT3700-GS08 |
www.vishay.com
2
For technical questions, contact:
detectortechsupport@vishay.com
Document Number: 81478
Rev. 1.6, 14-Jul-10
VEMT3700
Vishay Semiconductors
Silicon NPN Phototransistor
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
0
20
40
60
80
0
25
50
75
100
125
P
V
T
amb
- Ambient Temperature (°C)
100
20376
R = 400 K/W
10
30
50
70
90
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
V
CE
= 5 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
MIN.
70
TYP.
MAX.
UNIT
V
nA
pF
1
3
200
Collector ligth current
V
CE
= 5 V
I
ca
0.25
0.5
mA
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
λ
p
λ
0.1
± 60
850
deg
nm
nm
450 to 1080
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 0.1 mA
V
S
= 5 V, I
C
= 1 mA,
λ
= 950 nm,
R
L
= 1 k
Ω
V
S
= 5 V, I
C
= 1 mA,
λ
= 950 nm,
R
L
= 100
Ω
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
V
CEsat
0.15
0.3
V
Rise time, fall time
t
r
/t
f
6
μs
t
r
/t
f
2
μs
Cut-off frequency
f
c
180
kHz
20
100
40
60
80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
C
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20
40
60
80
100
1.6
1.8
= 950 nm
94 8239
T
amb
- Ambient Temperature (°C)
I
c
V
CE
= 5 V
E
= 1 mW/cm
2
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