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參數(shù)資料
| 型號(hào)： | VEC2901 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Switching, Flash Applications |
| 中文描述： | 開關(guān)，F(xiàn)lash應(yīng)用程序 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 50K |
| 代理商： | VEC2901 |
VEC2901
No.8198-1/6
Features
Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
Ultrasmall package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
100
50
V
V
V
A
A
W
°
C
°
C
6
5
8
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
1.1
150
--55 to +150
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
30
±
10
150
600
0.25
150
V
V
mA
mA
W
°
C
°
C
PW
≤
10
μ
s, duty cycle
≤
1%
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1.6A, IB=53mA
IC=2A, IB=40mA
100
100
400
nA
nA
250
330
26
55
75
MHz
pF
mV
mV
Collector-to-Emitter Saturation Voltage
110
150
Marking : AA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8198
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
12505EA TS IM TB-00001130
VEC2901
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon MOSFET
Switching, Flash Applications
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