參數(shù)資料
型號(hào)： V58C2128164SBLS7
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： 8M X 16 DDR DRAM, 0.75 ns, PBGA60
封裝： MO-233, FBGA-60
文件頁(yè)數(shù)： 19/62頁(yè)
文件大小： 977K
代理商： V58C2128164SBLS7
26
V58C2128(804/404/164)SB Rev. 1.1 March 2004
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB
Self Refresh
A self refresh command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising
edge of the clock (CK). Once the self refresh command is initiated, CKE must be held low to keep the device
in self refresh mode. During the self refresh operation, all inputs except CKE are ignored. The clock is inter-
nally disabled during self refresh operation to reduce power consumption. The self refresh is exited by sup-
plying stable clock input before returning CKE high, asserting deselect or NOP command and then asserting
CKE high for longer than tSREX for locking of DLL. The auto refresh is required before self refresh entry and
after self refresh exit.
Power Down Mode
The power down mode is entered when CKE is low and exited when CKE is high. Once the power down
mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit are gated off to reduce power
consumption. All banks should be in idle state prior to entering the precharge power down mode and CKE
should be set high at least 1tck+tIS prior to row active command. During power down mode, refresh opera-
tions cannot be performed, therefore the device cannot remain in power down mode longer than the refresh
period (tREF) of the device.
Command
CKE
Stable Clock
tSREX
Auto
Refresh
NOP
Self
Refresh
CK, CK
CKE
Precharge
Active
Read
NOP
Active
power down
Exit
Active
Entry
power
Exit
down
power
Entry
down
Precharge
precharge
Command
CK, CK
相關(guān)PDF資料
PDF描述
V58C2128404SCLJ5 32M X 4 DDR DRAM, 0.65 ns, PBGA60
V58C2256324SAH-36 8M X 32 DDR DRAM, 0.55 ns, PBGA144
V58C2256404SBJ5 64M X 4 DDR DRAM, 0.65 ns, PBGA60
V58C2256164SBLJ5B 16M X 16 DDR DRAM, 0.65 ns, PBGA60
V58C2256404SCLS7I 64M X 4 DDR DRAM, 0.75 ns, PBGA60
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V58C2128404S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
V58C2128804S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
V58C2256 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256164S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256324SAB30 制造商:Marvell 功能描述:Marvell V58C2256324SAB30
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*