參數(shù)資料
型號(hào)： V54C3128404VBI6I
廠(chǎng)商： PROMOS TECHNOLOGIES INC
元件分類(lèi)： DRAM
英文描述： 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： GREEN, TSOP2-54
文件頁(yè)數(shù)： 1/56頁(yè)
文件大小： 726K
代理商： V54C3128404VBI6I
1
V54C3128(16/80/40)4VB*I
128Mbit SDRAM, INDUSTRIAL TEMPERATURE
3.3 VOLT, TSOP II / FBGA
8M X 16, 16M X 8, 32M X 4
V54C3128(16/80/40)4VB*I Rev. 1.4 December 2007
67PC
7
System Frequency (fCK)
166 MHz
143 MHz
Clock Cycle Time (tCK3)
6 ns
7 ns
Clock Access Time (tAC3) CAS Latency = 3
5.4 ns
Clock Access Time (tAC2) CAS Latency = 2
5.4 ns
6 ns
Features
■ 4 banks x 2Mbit x 16 organization
■ 4 banks x 4Mbit x 8 organization
■ 4 banks x 8Mbit x 4 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 3
■ Programmable Wrap Sequence: Sequential or
Interleave
■ Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 4096 cycles/64 ms
■ Available in 54-ball FBGA, 60-ball FBGA and
54-Pin TSOPII
■ LVTTL Interface
■ Single (+3.0 V ~3.3V)
±0.3 V Power Supply
■ Industrial Temperature (TA): -40C to +85C
Description
The V54C3128(16/80/40)4VB*I is a four bank
Synchronous DRAM organized as 4 banks x 2Mbit
x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4.
The
V54C3128(16/80/40)4VB*I
achieves
high
speed data transfer rates up to 166 MHz by employ-
ing a chip architecture that prefetches multiple bits
and then synchronizes the output data to a system
clock.
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
C/S/T
6
7PC
7
Std.
L
-40
°C to +85°C
I
相關(guān)PDF資料
PDF描述
V54C3128404VBJ8PC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PBGA60
V54C3128804VBLT7 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128804VBT7PC 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128404VBLI7 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128804VBLJ8PC 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C3128404VS 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128404VT 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128804VAT 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
V54C3128804VAT7 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
V54C3128804VAT8 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
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