參數(shù)資料
型號(hào)： V54C3128804VBT7PC
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 1/56頁(yè)
文件大小： 734K
代理商： V54C3128804VBT7PC
1
V54C3128(16/80/40)4VB
128Mbit SDRAM
3.3 VOLT, TSOP II / FBGA
8M X 16, 16M X 8, 32M X 4
V54C3128(16/80/40)4VB Rev. 1.5 March 2006
6
7PC
7
8PC
System Frequency (fCK)
166 MHz
143 MHz
125 MHz
Clock Cycle Time (tCK3)
6 ns
7 ns
8 ns
Clock Access Time (tAC3) CAS Latency = 3
5.4 ns
6 ns
Clock Access Time (tAC2) CAS Latency = 2
5.4 ns
6 ns
Features
■ 4 banks x 2Mbit x 16 organization
■ 4 banks x 4Mbit x 8 organization
■ 4 banks x 8Mbit x 4 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 3
■ Programmable Wrap Sequence: Sequential or
Interleave
■ Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 4096 cycles/64 ms
■ Available in 54-ball FBGA, 60-ball FBGA, and
54-Pin TSOPII
■ LVTTL Interface
■ Single +3.3 V
±0.3 V Power Supply
Description
The V54C3128(16/80/40)4VB is a four bank Syn-
chronous DRAM organized as 4 banks x 2Mbit x 16,
4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The
V54C3128(16/80/40)4VB achieves high speed data
transfer rates up to 166 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
C/S/T
6
7PC
7
8PC
Std.
L
0
°C to 70°C
Blank
相關(guān)PDF資料
PDF描述
V54C3128404VBLI7 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128804VBLJ8PC 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60
V54C3128404VBI8PC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
V54C3128164VBI6 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128164VBS8PC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C3128804VS 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128804VT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C316162 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162V 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162V-5 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*