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參數(shù)資料
| 型號： | V53C832L40 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 高性能3.3伏256 × 32 EDO公司頁面模式的CMOS動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 178K |
| 代理商： | V53C832L40 |
6
V53C832L Rev. 1.6 August 1999
MOSEL VITELIC
V53C832L
34
t
WOH
Write to OE Hold Time
5
5
6
ns
14
35
t
OED
OE to Data Delay Time
5
5
6
ns
14
36
t
RWC
Read-Modify-Write Cycle Time
100
105
110
ns
37
t
RRW
Read-Modify-Write Cycle
RAS Pulse Width
65
70
75
ns
38
t
CWD
CAS to WE Delay
26
28
30
ns
12
39
t
RWD
RAS to WE Delay in Read-
Modify-Write Cycle
50
54
58
ns
12
40
t
CRW
CAS Pulse Width (RMW)
44
46
48
ns
41
t
AWD
Col. Address to WE Delay
32
35
38
ns
12
42
t
PC
EDO Fast Page Mode Read
or Write Cycle Time
12
14
15
ns
43
t
CP
CAS Precharge Time
3
4
5
ns
44
t
CAR
Column Address to RAS Setup Time
16
18
20
ns
45
t
CAP
Access Time from Column Precharge
19
21
23
ns
7
46
t
DHR
Data in Hold Time Referenced to RAS
26
28
30
ns
47
t
CSR
CAS Setup Time CAS- before-RASRefresh
10
10
10
ns
48
t
RPC
RAS to CAS Precharge Time
0
0
0
ns
49
t
CHR
CAS Hold Time
CAS
-before-RAS Refresh
7
8
8
ns
50
t
PCM
EDO Page Mode Read-Modify-Write Cycle Time
56
58
60
ns
51
t
COH
Output Hold After CAS Low
5
5
5
ns
52
t
OES
OE Low to CAS HIGH setup time
5
5
5
ns
53
t
OEH
OE Hold Time from WE during Read-Modify Write
Cycle
10
10
10
ns
54
t
OEP
OE High Pulse Width
10
10
10
ns
55
t
T
Transition Time (Rise and Fall)
1.5
50
1.5
50
1.5
50
ns
15
56
t
REF
Refresh Interval (512 Cycles)
8
8
8
ms
17
#
Symbol
Parameter
30
35
40
Unit
Notes
Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)
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