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參數(shù)資料
| 型號： | V53C816H60 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 為512k × 16快速頁面模式的CMOS動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 213K |
| 代理商： | V53C816H60 |
6
V53C816H Rev. 1.3 February 1999
MOSEL V ITELIC
V53C816H
32
t
DS
Data in Setup Time
0
0
0
0
ns
14
33
t
DH
Data in Hold Time
5
6
7
10
ns
14
34
t
WOH
Write to OE Hold Time
6
7
8
10
ns
14
35
t
OED
OE to Data Delay Time
6
7
8
10
ns
14
36
t
RWC
Read-Modify-Write Cycle Time
110
115
130
155
ns
37
t
RRW
Read-Modify-Write Cycle RAS Pulse Width
75
80
87
105
ns
38
t
CWD
CAS to WE Delay
30
32
34
40
ns
12
39
t
RWD
RAS to WE Delay in Read-Modify-Write
Cycle
58
62
68
85
ns
12
40
t
CRW
CAS Pulse Width (RMW)
48
50
52
65
ns
41
t
AWD
Col. Address to WE Delay
38
41
42
58
ns
12
42
t
PC
Fast Page Mode Read or Write Cycle Time
23
25
28
35
ns
43
t
CP
CAS Precharge Time
5
6
7
10
ns
44
t
CAR
Column Address to RAS Setup Time
20
22
24
30
ns
45
t
CAP
Access Time from Column
Precharge
22
24
27
34
ns
7
46
t
DHR
Data in Hold Time Referenced to RAS
30
35
40
50
ns
47
t
CSR
CAS Setup Time CAS-before-RAS
Refresh
10
10
10
10
ns
48
t
RPC
RAS to CAS Precharge Time
0
0
0
0
ns
49
t
CHR
CAS Hold Time CAS-before-RAS
Refresh
8
10
12
15
ns
50
t
PCM
Fast Page Mode Read-Modify-Write Cycle
Time
60
65
70
85
ns
51
t
T
Transition Time (Rise and Fall)
3
50
3
50
3
50
3
50
ns
15
52
t
REF
Refresh Interval (512 Cycles)
8
8
8
16
8
17
#
Symbol
Parameter
40
45
50
60
Unit Notes
Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)
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