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參數(shù)資料
| 型號： | V53C16258HT30I |
| 廠商： | MOSEL-VITELIC |
| 元件分類： | DRAM |
| 英文描述： | 256K X 16 EDO DRAM, 30 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-44/40 |
| 文件頁數(shù)： | 18/20頁 |
| 文件大?。?/td> | 556K |
| 代理商： | V53C16258HT30I |
7
MOSEL VITELIC
V53C16258H
V53C16258H Rev. 3.8 November 1999
Notes:
1.
ICC is dependent on output loading when the device output is selected. Specified ICC (max.) is measured with the
output open.
2.
ICC is dependent upon the number of address transitions. Specified ICC (max.) is measured with a maximum of two
transitions per address cycle in EDO Page Mode.
3.
Specified VIL (min.) is steady state operating. During transitions, VIL (min.) may undershoot to –1.0 V for a period
not to exceed 20 ns. All AC parameters are measured with VIL (min.) ≥ VSS and VIH (max.) ≤ VCC.
4.
tRCD (max.) is specified for reference only. Operation within tRCD (max.) limits insures that tRAC (max.) and tCAA
(max.) can be met. If tRCD is greater than the specified tRCD (max.), the access time is controlled by tCAA and tCAC.
5.
Either tRRH or tRCH must be satisified for a Read Cycle to occur.
6.
Measured with a load equivalent to one TTL input and 50 pF.
7.
Access time is determined by the longest of tCAA, tCAC and tCAP.
8.
Assumes that tRAD ≤ tRAD (max.). If tRAD is greater than tRAD (max.), tRAC will increase by the amount that tRAD
exceeds tRAD (max.).
9.
Assumes that tRCD ≤ tRCD (max.). If tRCD is greater than tRCD (max.), tRAC will increase by the amount that tRCD
exceeds tRCD (max.).
10.
Assumes that tRAD ≥ tRAD (max.).
11.
Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference
point only. If tRAD is greater than the specified tRAD (max.) limit, the access time is controlled by tCAA and tCAC.
12.
tWCS, tRWD, tAWD and tCWD are not restrictive operating parameters.
13.
tWCS (min.) must be satisfied in an Early Write Cycle.
14.
tDS and tDH are referenced to the latter occurrence of CAS or WE.
15.
tT is measured between VIH (min.) and VIL (max.). AC-measurements assume tT = 3 ns.
16.
Assumes a three-state test load (5 pF and a 500 Ohm Thevenin equivalent).
17.
An initial 200
s pause and 8 RAS-containing cycles are required when exiting an extended period of bias without
clocks. An extended period of time without clocks is defined as one that exceeds the specified Refresh Interval.
18.
One CBR refresh or complete set of row refreah cycles must be completed upon exiting Self Refreah Mode.
54
tOEP
OE High Pulse Width
4
5
8
10
ns
55
tT
Transition Time (Rise and Fall)
1.5
50
1.5
50
1.5
50
1.5
50
1.5
50
1.5
50
ns
15
56
tREF
Refresh Interval (512 Cycles)
8
ms
17
Optional Self Refresh
57
tRASS
RAS Pulse Width During Self
Refresh
100
s
18
58
tRPS
RAS Precharge Time During
Self Refresh
100
ns
18
59
tCHS
CAS Hold Time Width During
Self Refresh
100
ns
18
60
tCHD
CAS Low Time During Self
Refresh
100
s
18
#
Symbol
Parameter
25
(100 MHz)
30
35
40
45
50
Unit Notes
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics (Cont’d)
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| V53C16258HT35 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
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