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參數(shù)資料
| 型號(hào)： | V53C16258HT30I |
| 廠商： | MOSEL-VITELIC |
| 元件分類： | DRAM |
| 英文描述： | 256K X 16 EDO DRAM, 30 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-44/40 |
| 文件頁數(shù)： | 16/20頁 |
| 文件大小： | 556K |
| 代理商： | V53C16258HT30I |
5
MOSEL VITELIC
V53C16258H
V53C16258H Rev. 3.8 November 1999
AC Characteristics
TA = 0°C to 70°C, VCC = 5 V ± 10%, VSS = 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
#
Symbol
Parameter
25
(100 MHz)
30
35
40
45
50
Unit Notes
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
1
tRAS
RAS Pulse Width
25
75K
30
75K
35
75K
40
75K
45
75K
50
75K
ns
2
tRC
Read or Write Cycle Time
45
60
70
75
80
90
ns
3
tRP
RAS Precharge Time
15
20
25
30
ns
4
tCSH
CAS Hold Time
25
30
35
40
45
50
ns
5
tCAS
CAS Pulse Width
4
5
6
7
8
9
ns
6
tRCD
RAS to CAS Delay
10
17
12
20
13
24
15
28
18
32
19
36
ns
4
7
tRCS
Read Command Setup Time
0
ns
8
tASR
Row Address Setup Time
0
ns
9
tRAH
Row Address Hold Time
4
5
6
7
8
9
ns
10
tASC
Column Address Setup Time
0
ns
11
tCAH
Column Address Hold Time
4
5
6
7
ns
12
tRSH (R)
RAS Hold Time (Read Cycle)
7
9
10
ns
13
tCRP
CAS to RAS Precharge Time
5
ns
14
tRCH
Read Command Hold Time
Referenced to CAS
0
ns
5
15
tRRH
Read Command Hold Time
Referenced to RAS
0
ns
5
16
tROH
RAS Hold Time Referenced
to OE
4
6
7
8
9
10
ns
17
tOAC
Access Time from OE
8
10
11
12
13
14
ns
12
18
tCAC
Access Time from CAS
8
10
11
12
13
14
ns 6, 7, 14
19
tRAC
Access Time from RAS
25
30
35
40
45
50
ns
6, 8, 9
20
tCAA
Access Time from Column
Address
13
16
18
20
22
24
ns 6, 7, 10
21
tLZ
OE or CAS to Low-Z Output
0
ns
16
22
tHZ
OE or CAS to High-Z Output
0
5
0
5
0
6
0
6
0
7
0
8
ns
16
23
tAR
Column Address Hold Time
from RAS
19
23
25
30
35
40
ns
24
tRAD
RAS to Column Address
Delay Time
8
13
9
14
10
17
12
20
13
23
14
26
ns
11
25
tRSH (W) RAS or CAS Hold Time in
Write Cycle
7
9
10
ns
26
tCWL
Write Command to CAS
Lead Time
5
7
8
10
13
14
ns
27
tWCS
Write Command Setup Time
0
ns
12, 13
28
tWCH
Write Command Hold Time
4
5
6
7
ns
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