125°C operation
1 μs transient response
>3.5 million hours MTBF
Typical efficiency 93% at 1.5 V/50 A
No output filtering required
BGA or J-Lead packages
Vicor Corporation
Tel: 800-735-6200
vicorpower.com
VI Chip Voltage Transformation Module
V048K015T090
Rev. 1.0 Page 1 of 16
Closing the loop back to an input Pre-Regulation
Module (PRM) or DC-DC converter can compensate
for R
OUT
.
Part Numbering
Product Description
The V048K015T090 V
I Chip Voltage Transformation
Module (VTM) breaks records for speed, density and
efficiency to meet the demands of advanced DSP,
FPGA, ASIC, processor cores and microprocessor
applications at the point of load (POL) while providing
isolation from input to output. It achieves a response
time of less than 1 μs and delivers up to 90Ain a
volume of less than 0.25 in
3
while providing low output
voltages with unprecedented efficiency. It may be
paralleled to deliver hundreds of amps at an output
voltage settable from 0.8 to 1.7 Vdc.
The VTM V048K015T090’s nominal output voltage is
1.5 Vdc from a 48 Vdc input factorized bus, V
f
, and is
controllable from 0.8 to 1.7 Vdc at no load, and from
0.8 to 1.6 Vdc at full load, over a V
f
input range of 26
to 55 Vdc. It can be operated either open- or closed-loop
depending on the output regulation needs of the
application. Operating open-loop, the output voltage
tracks its V
f
input voltage with a transformation ratio,
K = 1/32, and an output resistance, R
OUT
= 1.0milliohm,to
enable applications requiring a programmable low
output voltage at high current and high efficiency.
The 1.5 V VTM achieves break-through current density
of 360A/in
3
in a V
I Chip package compatible with
standard pick-and-place and surface mount assembly
processes. The V
I Chip BGApackage supports in-board
mounting with a low profile of 0.16" (4 mm) over the
board. AJ-lead package option supports on-board
surface mounting with a profile of only 0.25" (6 mm)
over the board. The VTM’s fast dynamic response and
low noise eliminate the need for bulk capacitance at the
load, substantially increasing the POL density while
improving reliability and decreasing cost.
Absolute Maximum Ratings
Parameter
Values
Unit
Notes
+In to -In
-1.0 to 60.0
Vdc
+In to -In
100
Vdc
For 100 ms
PC to -In
-0.3 to 7.0
Vdc
TM to -In
-0.3 to 7.0
Vdc
VC to -In
-0.3 to 19.0
Vdc
+Out to -Out
-0.1 to 4.0
Vdc
Isolation voltage
2,250
Vdc
Input to Output
Operating junction temperature
-40 to 125
°C
See Note
Output current
90
A
Continuous
Peak output current
135
A
For 1 ms
Case temperature during reflow
208
°C
Storage temperature
-40 to 150
°C
Output power
145
W
Continuous
Peak output power
217
W
For 1 ms
VI Chip
Voltage Transformation Module
TM
– VTM
48 V to 1.5 V VI Chip Converter
90 A (135 A for 1 ms)
High density – 360 A/in
3
Small footprint – 84 A/in
2
Low weight – 0.5 oz (14 g)
Pick & Place / SMD
V048K015T090
V
f
= 26- 55V
V
OUT
= 0.8- 1.7V
I
OUT
= 90A
K =
1/32
R
OUT
= 1.2m
max
Actual size
VTM
Note:
The referenced junction is defined as the semiconductor having the highest temperature.
This temperature is monitored by the temperature monitor (TM) signal and by a shutdown comparator.
K indicates BGA configuration. For other
mounting options see Part Numbering below.
Output Current
Designator
(=I
OUT
)
V
048
K
015
T
090
Voltage
Transformation
Module
Input Voltage
Designator
Product Grade Temperatures (°C)
Grade
Storage
T
-40 to150
Operating
-40 to125
Configuration Options
A = On-board, elevated (Fig.16)
F = On-board (Fig.15)
K = In-board (Fig.14)
Output Voltage
Designator
(=V
OUT
x10)