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參數(shù)資料
| 型號： | UTCX0202 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SCR |
| 中文描述： | 可控硅 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 172K |
| 代理商： | UTCX0202 |
UTC X0202/A
SCR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R301-005,A
SENSITIVE SCRs
DESCRIPTION
The X0202/A SCR series is suitable for all applications
where the available gate current is limited, such as ground
fault circuit interruptors, overvoltage crowbar protection in
low power supplies, capacitive ignition circuit,……
FEATURES:
*I
T(RMS) :
1.25A
*V
DRM
/V
RRM
:600/800V
1:CATHODE 2:GATE 3:ANODE
TO-92
1
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified )
PARAMETERS
Peak Repetitive Forward and Reverse Blocking Voltage
(Tj=110
°
C, R
GK
=1k
)
X0202
X0202A
RMS On-State Current (TI=55
°
C)
180
°
C conduction angle
Average On-State Current (TI=55
°
C)
180
°
C conduction angle
Non Repetitive Surge Peak on-state Current
(tp=8.3ms Tj=25
°
C)
Non Repetitive Surge Peak on-state Current
(tp=10ms Tj=25
°
C)
I t Value for fusing (tp=10ms Tj=25
°
C)
Critical Rate Of Rise Of On-state Current
I
G
=2*I
GT
,tr
≤
100ns, f=60Hz, Tj=125
°
C
Peak Gate Current (p=20
μ
s Tj=125
°
C)
Average Gate Power Dissipation (Tj=125
°
C)
Storage Junction Temperature Range
Operating Junction Temperature Range
SYMBOL
RATINGS
600
800
1.25
UNIT
V
DRM
, V
RRM
V
I
T(RMS)
A
IT
(AV)
0.8
A
I
TSM
25
22.5
A
I
TSM
A
I t
2.5
A
2
S
dI/dt
50
A/
μ
s
I
GM
P
G(AV)
Tstg
Tj
1.2
0.2
A
W
°
C
°
C
-40~150
-40~125
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UTCX0202A | SCR |
| UTXQ512 | CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM |
| UUT1V101MCL | ALUMINUM ELECTROLYTIC CAPACITORS |
| UUT1E101MCL | ALUMINUM ELECTROLYTIC CAPACITORS |
| UUT1E220MCL | ALUMINUM ELECTROLYTIC CAPACITORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UTCX0202A | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCR |
| UTD2002 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UTD2004 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UTD20N03 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE POWER M OSFET |
| UTD20N03G-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE POWER M OSFET |
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