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參數(shù)資料
| 型號： | UTXQ512 |
| 廠商： | Aeroflex Inc. |
| 英文描述： | CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM |
| 中文描述： | 紙品加工Aeroflex公司UTMC UT9Q512分的SRAM成為東南大學(xué)免疫100萬× 1的SRAM |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | UTXQ512 |
Aeroflex UTMC Application Note
UTXQ512-AN-000
_______________________________________________
Creation Date: 6/21/02
Page 1
Modification Date:
CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE
1M X 1 SRAM
This application note describes how to use two UT9Q512 4M SRAMs and one UT54ACS151 logic device
to mimic a 1Mx1 SRAM. As shown below, the single bit is written into three locations of the same. When
the data is read out, it is used in a voting system to select either a 0 or a 1 output. This voting method
virtually makes it immune to SEU hits. Since the bits of a word are not physically adjacent on the die, it is
nearly impossible for one particle to cause two bits to flip in the same word. As such, it would require
multiple particle hits to cause an upset.
The system timing results in maximum read cycle of 48ns, (25ns SRAM read + 23ns input to Y). For better
system performance Aeroflex UTMC can screen for memories with read cycles access times down to 17 ns.
The timing analysis above assumes capacitive output loads of 50 pF or less. If the system loading is greater
than 50 pF, the user should consult the “Operational Frequency vs. Load Capacitance” application note to
calculate the true performance of the design. This application note can be downloaded from:
http://www.utmc.com/products/msi_switch.pdf.
If a tri-statable output is required, then additional logic would be required. Aeroflex UTMC has the
following logic devices with tristate controlled outputs: UT54ACS244, UT54ACS245, UT54ACS365,
UT54ACS373, UT54ACS374, and UT54ACS541. Each of these devices has a non-inverting tri-statable
output.
If the 4M SRAMs are packaged in our shielded package, they can withstand a total dose of 100K rads(Si)
in most orbits. The logic devices can be purchased with a total dose hardness ranging from 100K rads(Si) to
1 Mrad.
This design example requires more board real estate and a new board layout, along with the additional
timing analysis, mentioned above, to replace the obsoleted BAE Systems 1M x 1 SRAM parts. The parts
shown would use approximately 1.75 square inches of board space.
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