參數(shù)資料
型號(hào): UTC2SA1020
廠商: 友順科技股份有限公司
英文描述: PNP EPITAXIAL SILICON TRANSISTOR
中文描述: 進(jìn)步黨外延硅晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 170K
代理商: UTC2SA1020
UTC 2SA1020
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-021,A
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and
power switching applications.
FEATURES
*Low collector saturation voltage:
VCE(sat)=-0.5V(max.) (IC=-1A)
*High speed switching time: tstg=1.0
μ
s(Typ.)
*Complement to UTC 2SC2655
SOT-89
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature
* : Mounted on cermic substrate( 250mm
2
×
0.8t )
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
Collector to emitter breakdown
voltage
DC Current Gain
h
FE1
h
FE2
Collector to emitter saturation
voltage
Base to emitter saturation voltage
V
BE(sat)
Transition frequency
Collector output capacitance
Cob
Turn-on time
ton
Storage time
tstg
Fall time
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
C
P
C
*
T
j
T
STG
VALUE
-50
-50
-5
-2
0.5
1
150
-55 ~ +150
UNIT
V
V
V
A
W
W
°
C
°
C
TEST CONDITIONS
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
Ic=-10mA, I
B
=0
MIN
TYP
MAX
-1.0
-1.0
UNIT
μ
A
μ
A
V
V
(BR)CEO
-50
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A
Ic=-1A, I
B
=-0.05A
70
40
240
V
CE(sat)
-0.5
V
Ic=-1A, I
B
=-0.05A
V
CE
=-2V, Ic=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
-1.2
V
f
T
100
40
0.1
1.0
0.1
MHz
pF
μ
s
μ
s
μ
s
Switching time
tf
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