參數(shù)資料
型號: UTC2SA928A
廠商: 友順科技股份有限公司
英文描述: PNP EPITAXIAL SILICON TRANSISTOR
中文描述: 進(jìn)步黨外延硅晶體管
文件頁數(shù): 1/2頁
文件大小: 44K
代理商: UTC2SA928A
UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R211-009,A
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SC2328A
TO-92NL
1
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
BV
CBO
Collector-emitter breakdown voltage
BV
CEO
Emitter-base breakdown voltage
BV
EBO
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
DC current gain(note)
h
FE
Base-emitter on voltage
V
BE
(on)
Collector-emitter saturation voltage
V
CE
(sat)
Output capacitace
Cob
Current gain bandwidth product
f
T
CLASSIFICATION OF hFE
RANK
RANGE
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
-30
-30
-5
1
-2
150
-55 ~ +150
UNIT
V
V
V
W
A
°
C
°
C
TEST CONDITIONS
Ic=-100
μ
A,I
E
=0
Ic=-10mA,I
B
=0
I
E
=-1mA,Ic=0
V
CB
=-30V,I
E
=0
V
BE
=-5V,Ic=0
V
CE
=-2V,Ic=-500mA
V
CE
=-2V,Ic=-500mA
Ic=-1.5A,I
B
=-0.03A
V
CB
=-10V, I
E
=0,f=1MHz
V
CE
=-2V,Ic=-500mA
MIN
-30
-30
-5
100
TYP
48
120
MAX
-100
-100
320
-1
-2
UNIT
V
V
V
nA
nA
V
V
pF
MHz
O
Y
100-200
160-320
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