參數(shù)資料
型號(hào): UT7C138C55GCX
英文描述: SRAM|4KX8|CMOS| RAD HARD|PGA|68PIN|CERAMIC
中文描述: 靜態(tài)存儲(chǔ)器| 4KX8 |的CMOS | RAD數(shù)據(jù)通信硬|美巡賽| 68PIN |陶瓷
文件頁數(shù): 9/21頁
文件大?。?/td> 272K
代理商: UT7C138C55GCX
9
AC CHARACTERISTICS WRITE CYCLE
1
(V
DD
= 5.0V±10%)
Notes:
1. For information on part-to-part delay through DPRAM cells from writing port to reading port, refer to Read Timing with Port-to-Port Delay waveform (see figure 3c).
SYMBOL
PARAMETER
7C138 - 45
7C139 - 45
MIN MAX
7C138 - 55
7C139 - 55
MIN MAX
UNIT
t
WC
Write cycle time
45
55
ns
t
SCE
CE LOW to write end
40
50
ns
t
AW
Address set-up to write end
40
50
ns
t
HA
Address hold from write end
0
0
ns
t
SA
Address set-up to write start
0
0
ns
t
PWE
Write pulse width
40
50
ns
t
SD
Data set-up to write end
40
50
ns
t
HD
Data hold from write end
0
0
ns
t
HZWE
R/W LOW to high Z
20
20
ns
t
LZWE
R/W HIGH to low Z
0
0
ns
t
WDD
Write pulse to data delay
95
105
ns
t
DDD
Write data valid to read data valid
95
105
ns
t
WHWL
Write disable time
5
5
ns
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