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參數(shù)資料
| 型號： | UT62257C |
| 英文描述： | 4 Mb (512K x 8, 256K x 16) Sector Erase, Flash Memory |
| 中文描述： | 異步靜態(tài)RAM高速 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 94K |
| 代理商： | UT62257C |
UTRON
UT62256C(E)
Rev. 1.0
32K X 8 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80071
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
3
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to VSS
VTERM
-0.5 to +7.0
V
Operating Temperature
TA
0 to +70
J
Storage Temperature
TSTG
-65 to +150
J
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 secs)
Tsolder
260
J
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE
OE
WE
I/O OPERATION
SUPPLY CURRENT
Standby
H
X
High - Z
ISB, ISB1
Output Disable
L
H
High - Z
ICC, ICC1, ICC2
Read
L
H
DOUT
ICC, ICC1, ICC2
Write
L
X
L
DIN
ICC, ICC1, ICC2
Note:
H = VIH, L=VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS (VCC = 5V±10%, TA = -20J
~80J
)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Input High Voltage
VIH
2.2
-
VCC+0.5
V
Input Low Voltage
VIL
- 0.5
-
0.8
V
Input Leakage Current
ILI
VSS
VIN
VCC
- 1
-
1
A
Output Leakage
Current
ILO
VSS
VI/O
VCC
CE =VIH or OE = VIH or WE = VIL
- 1
-
1
A
Output High Voltage
VOH
IOH= - 1mA
2.4
-
V
Output Low Voltage
VOL
IOL= 4mA
-
0.4
V
- 35
-
40
50
mA
ICC
Cycle time=Min
CE = VIL ,II/O = 0mA ,.
- 70
-
30
40
mA
ICC1
Cycle time=1s, CE =0.2V; II/O=0mA,
other pins at 0.2V or VCC-0.2V
-
10
mA
Operating Power
Supply Current
ICC2
Cycle time=500ns, CE =0.2V;II/O=0mA,
other pins at 0.2V or VCC-0.2V
-
20
mA
Standby Current(TTL)
ISB
CE =VIH
-
3
mA
ISB1
CE
VCC-0.2V
-L
-
2
100
A
Standby Current(CMOS)
-LL
-
1
50
A
Notes:
1. Overshoot : Vcc+2.0v for pulse width less than 10ns.
2. Undershoot : Vss-2.0v for pulse width less than 10ns.
3. Overshoot and Undershoot are sampled, not 100% tested.
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