參數(shù)資料
型號(hào): UT62256C(E)
英文描述: ASYNCHRONOUS STATIC RAM- High Speed
中文描述: 異步靜態(tài)RAM高速
文件頁數(shù): 7/12頁
文件大小: 94K
代理商: UT62256C(E)
UTRON
UT62256C(E)
Rev. 1.0
32K X 8 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80071
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
4
CAPACITANCE (TA=25J
, f=1.0MHz)
PARAMETER
SYMBOL
MIN.
MAX
UNIT
Input Capacitance
CIN
-
8
pF
Input/Output Capacitance
CI/O
-
10
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
0V to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Reference Levels
1.5V
Output Load
CL = 100pF, IOH/IOL = -1mA/4mA
AC ELECTRICAL CHARACTERISTICS
(VCC = 5V±10% , TA = -20J
~80J
)
(1) READ CYCLE
PARAMETER
SYMBOL
UT62256C(E)-35
UT62256C(E)-70
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
tRC
35
-
70
-
ns
Address Access Time
tAA
-
35
-
70
ns
Chip Enable Access Time
tACE
-
35
-
70
ns
Output Enable Access Time
tOE
-
25
-
35
ns
Chip Enable to Output in Low Z
tCLZ*
10
-
10
-
ns
Output Enable to Output in Low Z
tOLZ*
5
-
5
-
ns
Chip Disable to Output in High Z
tCHZ*
-
25
-
35
ns
Output Disable to Output in High Z
tOHZ*
-
25
-
35
ns
Output Hold from Address Change
tOH
5
-
5
-
ns
(2) WRITE CYCLE
PARAMETER
SYMBOL
UT62256C(E)-35
UT62256C(E)-70
UNIT
MIN.
MAX.
MIN.
MAX.
Write Cycle Time
tWC
35
-
70
-
ns
Address Valid to End of Write
tAW
30
-
60
-
ns
Chip Enable to End of Write
tCW
30
-
60
-
ns
Address Set-up Time
tAS
0
-
0
-
ns
Write Pulse Width
tWP
25
-
50
-
ns
Write Recovery Time
tWR
0
-
0
-
ns
Data to Write Time Overlap
tDW
20
-
30
-
ns
Data Hold from End of Write Time
tDH
0
-
0
-
ns
Output Active from End of Write
tOW*
5
-
5
-
ns
Write to Output in High Z
tWHZ*
-
15
-
25
ns
*These parameters are guaranteed by device characterization, but not production tested.
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