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參數(shù)資料
| 型號(hào)： | USB10H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET(雙P溝道 PowerTrench MOS場(chǎng)效應(yīng)管（漏電流-1.9A, 漏源電壓-20V，導(dǎo)通電阻0.17Ω）) |
| 中文描述： | 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 241K |
| 代理商： | USB10H |
U
USB10H Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.1
0.2
0.5
-V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.03
0.1
0.3
1
3
10
30
-
D
RDS(ON) LIMIT
V = -4.5V
SINGLE PULSE
R = 180
°
C/W
T = 25
°
C
DC
1s
100ms
10ms
1ms
100us
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =180
°
C/W
T = 25
°
C
A
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
T - T = P * R JA
P(pk)
t
1
t
2
R (t) = r(t) * R
R =
180
°
C/W
0
1
2
3
4
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
V = -5V
-15V
I = -1.9A
-10V
0.1
0.2
0.5
1
2
5
10
20
30
100
300
1000
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| USB10P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| USB1101 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:USB 2.0 FS Peripheral Transceiver |
| USB1101L10X | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:USB 2.0 FS Peripheral Transceiver |
| USB-119FCAM | 制造商:FUJI PHOTO FILM 功能描述:USB CABLE, MINI B, FUJI CAMERA |
| USB12 | 制造商:MQP (ELECTRONICS) 功能描述:ANALYSER PACKET MASTER |
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