參數(shù)資料
型號: USB10H
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Dual P-Channel 2.5V Specified PowerTrench MOSFET(雙P溝道 PowerTrench MOS場效應管(漏電流-1.9A, 漏源電壓-20V,導通電阻0.17Ω))
中文描述: 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數(shù): 1/8頁
文件大?。?/td> 241K
代理商: USB10H
U
USB10H Rev. C
USB10H
Dual P-Channel 2.5V Specified PowerTrench
MOSFET
February 1999
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-20
±
8
-1.9
-5
0.96
0.9
0.7
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.
306
Device
USB10H
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
5
6
4
2
3
1
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
-1.9 A, -20 V. R
DS(on)
= 0.170
@ V
GS
= -4.5 V
R
DS(on)
= 0.250
@ V
GS
= -2.5 V
Low gate charge (3 nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
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