參數(shù)資料
型號: UPD78F0034AY
廠商: NEC Corp.
元件分類: 8位微控制器
英文描述: 8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash
中文描述: 8位微控制器與2/4/8K字節(jié)在系統(tǒng)可編程閃存
文件頁數(shù): 46/66頁
文件大?。?/td> 565K
代理商: UPD78F0034AY
μ
PD78F0034A, 78F0034AY
46
Data Sheet U14040EJ4V0DS
Flash Memory Programming Characteristics (V
DD
= 2.7 to 5.5 V, V
SS
= 0 V, V
PP
= 9.7 to 10.3 V)
(1) Basic characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Operating frequency
f
X
4.0
V
DD
5.5 V
1.0
8.38
MHz
2.7
V
DD
< 4.0 V
1.0
5.0
MHz
Supply voltage
V
DD
Operation voltage when writing
2.7
5.5
V
V
PPL
Upon V
PP
low-level detection
0
0.2V
DD
V
V
PP
Upon V
PP
high-level detection
0.8V
DD
V
DD
1.2V
DD
V
V
PPH
Upon V
PP
high-voltage detection
9.7
Note 1
10.0
Note 1
10.3
Note 1
V
V
DD
supply current
I
DD
10
mA
V
PP
supply current
I
PP
V
PP
=10.0 V
75
100
mA
Write time (per byte)
T
WRT
50
500
μ
s
Number of rewrites
C
WRT
20
Note 2
Times
Erase time
T
ERASE
1
20
s
Programming temperature
T
PRG
+10
+40
°
C
Notes 1.
For the product grades
K, E, and P
, 10.2 V (MIN.), 10.3 V (TYP.), and 10.4 V (MAX.), are applied.
2.
For the product specification
K and E
, the number is 1 (MAX.).
(2) Serial write operation characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
PP
set time
t
PSRON
V
PP
high voltage
1.0
μ
s
Set time from V
DD
to V
PP
t
DRPSR
V
PP
high voltage
1.0
μ
s
Set time from V
PP
to RESET
t
PSRRF
V
PP
high voltage
1.0
μ
s
V
PP
count start time from RESET
t
RFCF
1.0
μ
s
Count execution time
t
COUNT
2.0
ms
V
PP
counter high-level width
t
CH
8.0
μ
s
V
PP
counter low-level width
t
CL
8.0
μ
s
V
PP
counter noise elimination width
t
NFW
40
ns
Flash Memory Write Mode Set Timing
V
DD
V
DD
0 V
V
DD
RESET (input)
0 V
V
PPH
V
PPL
V
PP
V
PP
t
RFCF
t
PSRON
t
PSRRF
t
DRPSR
t
CH
t
CL
t
COUNT
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