參數(shù)資料
型號(hào): UPD77113AF1-XXX-CN1
廠商: NEC Corp.
英文描述: MOS INTEGRATED CIRCUIT
中文描述: 馬鞍山集成電路
文件頁(yè)數(shù): 23/62頁(yè)
文件大小: 352K
代理商: UPD77113AF1-XXX-CN1
Data Sheet U14373EJ3V0DS
23
μ
PD77113A, 77114
5.3 Signature Operation
The
μ
PD77113A and 77114 have a signature operation function so that the contents of the internal instruction
RAM can be verified. The signature operation performs a specific arithmetic operation on the data in the instruction
RAM booted up, and returns the result to a register. Perform the signature operation in advance on the device when
it is operating normally, and repeat the signature operation later to check whether the data in RAM is correct by
comparing the operation result with the previous result. If the results are identical, there is no problem.
The entry address is 0x9. Execute the operation by calling this address after setting the following parameter. The
operation result is stored in register R7.
R7L: Number of instruction steps for operation
DP3: First address of instruction memory for operation
5.4 Instruction ROM Modification
The
μ
PD77113A and 77114 have a function to modify the contents of the internal instruction mask ROM.
Instructions at up to four addresses can be modified.
The entry address is 0x10D. By calling this address with the following parameters, modification is performed.
R7L
R6H, R6L : Instruction code (32 bits)
: Address of instruction ROM to be modified
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