參數(shù)資料
型號(hào)： UPD61012
英文描述： Consumer IC
中文描述： 消費(fèi)性IC
文件頁(yè)數(shù)： 19/36頁(yè)
文件大?。?/td> 252K
代理商： UPD61012
μ
PD61P24
19
17.2 Program Memory Writing Procedure
The program memory is written at high speed in the following procedure.
(1) Pull down the pins not used to GND via resistor. Keep the CLK pin low.
(2) Supply 5 V to the V
DD
pin. Keep the V
PP
pin low.
(3) Wait for 10
μ
s, and supply 5 V to the V
PP
pin.
(4) Set the mode in which the program memory address is cleared to 0, by using the mode setting pins.
(5) Supply 6 V to V
DD
and 12.5 V to V
PP
.
(6) Set the program inhibit mode.
(7) Write data in the 1-ms write mode.
(8) Set the program inhibit mode.
(9) Set the verify mode. If the data has been correctly written, proceed to (10). If not, repeat (7) through (9).
(10) Additional writing of (Number of times data has been written in (7) through (9): X)
×
1 ms
(11) Set the program inhibit mode.
(12) Input a pulse four times to the CLK pin to update the program memory address (+1).
(13) Repeat (7) through (12) until the data is written to the last address.
(14) Set the mode in which the program memory address is cleared to 0.
(15) Change the voltage on the V
DD
and V
PP
pins to 5 V.
(16) Turn off power supply.
Program memory writing steps (2) through (12) are illustrated below.
Write
Verify
Additional write
Address
increment
Repeat X times
MD3
MD2
MD1
MD0
D0-D7
CLK
GND
V
DD
V
DD
V
DD
+1
GND
V
DD
V
PP
V
PP
Data input
Data output
Data input
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Reset
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