- 您現在的位置：買賣IC網 > PDF目錄300064 > UPD4482321GF-A65-A 256K X 32 CACHE SRAM, 6.5 ns, PQFP100 PDF資料下載
參數資料
| 型號： | UPD4482321GF-A65-A |
| 元件分類： | SRAM |
| 英文描述： | 256K X 32 CACHE SRAM, 6.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, PLASTIC, LQFP-100 |
| 文件頁數： | 4/28頁 |
| 文件大?。?/td> | 370K |
| 代理商： | UPD4482321GF-A65-A |
第1頁第2頁第3頁當前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
12
PD4482161, 4482181, 4482321, 4482361
Data Sheet M14521EJ3V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Notes
Supply voltage
VDD
-A65, -A75, -A85
–0.5
+4.0
V
-A65Y, -A75Y, -A85Y
-C75, -C85
–0.5
+3.0
V
-C75Y, -C85Y
Output supply voltage
VDDQ
–0.5
VDD
V
Input voltage
VIN
–0.5
VDD + 0.5
V
1, 2
Input / Output voltage
VI/O
–0.5
VDDQ + 0.5
V
1, 2
Operating ambient
TA
-A65, -A75, -A85, -C75, -C85
0
70
°C
temperature
-A65Y, -A75Y, -A85Y, -C75Y, -C85Y
–40
+85
Storage temperature
Tstg
–55
+125
°C
Notes 1. –2.0 V (MIN.)(Pulse width : 2 ns)
2. VDDQ + 2.3 V (MAX.)(Pulse width : 2 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions
(1/2)
Parameter
Symbol
Conditions
-A65, -A75, -A85
Unit
-A65Y, -A75Y, -A85Y
MIN.
TYP.
MAX.
Supply voltage
VDD
3.135
3.3
3.465
V
2.5 V LVTTL interface
Output supply voltage
VDDQ
2.375
2.5
2.9
V
High level input voltage
VIH
1.7
VDDQ + 0.3
V
Low level input voltage
VIL
–0.3 Note
+0.7
V
3.3 V LVTTL interface
Output supply voltage
VDDQ
3.135
3.3
3.465
V
High level input voltage
VIH
2.0
VDDQ + 0.3
V
Low level input voltage
VIL
–0.3 Note
+0.8
V
Note –0.8 V (MIN.)(Pulse width : 2 ns)
Recommended DC Operating Conditions
(2/2)
Parameter
Symbol
Conditions
-C75, -C85
Unit
-C75Y, -C85Y
MIN.
TYP.
MAX.
Supply voltage
VDD
2.375
2.5
2.625
V
Output supply voltage
VDDQ
2.375
2.5
2.625
V
High level input voltage
VIH
1.7
VDDQ + 0.3
V
Low level input voltage
VIL
–0.3 Note
+0.7
V
Note –0.8 V (MIN.)(Pulse width : 2 ns)
相關PDF資料 |
PDF描述 |
|---|---|
| UPD4502161G5-A10-7JF | x16 SDRAM |
| UPD4502161G5-A12-7JF | x16 SDRAM |
| UPD45125161G5-A10-9JF | Virtual Channel SDRAM |
| UPD45125161G5-A75-9JF | Virtual Channel SDRAM |
| UPD45125421G5-A10-9JF | Virtual Channel SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPD45128163G5 | 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM |
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復。