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參數(shù)資料
| 型號(hào)： | UPD444012AGY-B10X-MJH |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 4分位CMOS靜態(tài)RAM 256K字由16位溫度范圍 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大?。?/td> | 143K |
| 代理商： | UPD444012AGY-B10X-MJH |
Data Sheet M14464EJ5V0DS
13
μ
PD444012A-X
Write Cycle Timing Chart 2 (/CE1 Controlled)
t
WC
t
AS
t
CW1
t
DW
t
DH
Data in
High impedance
Address (Input)
/CE1 (Input)
/LB, /UB (Input)
I/O (Input)
High
impedance
CE2 (Input)
t
CW2
t
AW
t
WP
t
WR
/WE (Input)
t
BW
Cautions 1. During address transition, at least one of pins /CE1, CE2, /WE should be inactivated.
2. Do not input data to the I/O pins while they are in the output state.
Remark
Write operation is done during the overlap time of a low level /CE1, /WE, /LB and/or /UB, and a high level
CE2.
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