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參數(shù)資料
| 型號： | UPD444012AGY-B10X-MJH |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 4分位CMOS靜態(tài)RAM 256K字由16位溫度范圍 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大小： | 143K |
| 代理商： | UPD444012AGY-B10X-MJH |
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1999
MOS INTEGRATED CIRCUIT
μ
PD444012A-X
4M-BIT CMOS STATIC RAM
256K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
DATA SHEET
Document No. M14464EJ5V0DS00 (5th edition)
Date Published July 2001 NS CP (K)
Printed in Japan
The mark
#
shows major revised points.
Description
The
μ
PD444012A-X is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
The
μ
PD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The
μ
PD444012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
262,144 words by 16 bits organization
Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.)
Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Low voltage operation
(B version: V
CC
= 2.7 to 3.6 V, C version: V
CC
= 2.2 to 3.6 V)
Low V
CC
data retention: 1.0 V (MIN.)
Operating ambient temperature: T
A
= –25 to +85°C
Output Enable input for easy application
Two Chip Enable inputs: /CE1, CE2
Part number
Access time
Operating supply
Operating ambient
Supply current
ns (MAX.)
Voltage
temperature
At operating
At standby
At data retention
V
°C
mA (MAX.)
μ
A (MAX.)
μ
A (MAX.)
μ
PD444012A-BxxX
50
Note 1
, 55, 70, 85, 100
2.7 to 3.6
25 to +85
40
Note 2
7
3
45
Note 3
50
Note 4
μ
PD444012A-CxxX
70, 85, 100, 120
2.2 to 3.6
40
Notes 1.
V
CC
≥
3.0 V
2.
Cycle time
≥
70 ns
3.
Cycle time = 55 ns
4.
Cycle time = 50 ns
#
#
#
#
#
#
#
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