參數(shù)資料
型號(hào)： UPD444008LE-8
廠商： NEC Corp.
英文描述： 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
中文描述： 4分位CMOS快速靜態(tài)存儲(chǔ)器為512k - Word的8位
文件頁(yè)數(shù)： 6/16頁(yè)
文件大?。?/td> 100K
代理商： UPD444008LE-8
6
μ
PD444008
Data Sheet M14428EJ5V0DS
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
AC Test Conditions
Input Waveform (Rise and Fall Time
≤
3 ns)
Test Points
GND
3.0 V
1.5 V
1.5 V
Output Waveform
Test Points
1.5 V
1.5 V
Output Load
AC characteristics directed with the note should be measured with the output load shown in
Figure 1
or
Figure 2
.
Figure 1
Figure 2
(t
AA
, t
ACS
, t
OE
, t
OH
)
(t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
, t
OW
)
V
TT
= +1.5 V
I/O (Output)
50
Z
O
= 50
30 pF
C
L
+5.0 V
I/O (Output)
480
5 pF
C
L
255
Remark
C
L
includes capacitances of the probe and jig, and stray capacitances.
相關(guān)PDF資料
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UPD444008 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
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