參數(shù)資料
型號(hào): UPD444008LE-12
廠商: NEC Corp.
英文描述: 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
中文描述: 4分位CMOS快速靜態(tài)存儲(chǔ)器為512k - Word的8位
文件頁數(shù): 1/16頁
文件大?。?/td> 100K
代理商: UPD444008LE-12
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1999
MOS INTEGRATED CIRCUIT
μ
PD444008
4M-BIT CMOS FAST SRAM
512K-WORD BY 8-BIT
DATA SHEET
Document No. M14428EJ5V0DS00 (5th edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The
μ
PD444008 is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM.
Operating supply voltage is 5.0 V
±
0.5 V.
The
μ
PD444008 is packaged in 36-pin PLASTIC SOJ.
Features
524,288 words by 8 bits organization
Fast access time : 8, 10, 12 ns (MAX.)
Output Enable input for easy application
Single +5.0 V power supply
Ordering Information
Part number
Package
Access time
Supply current mA (MAX.)
ns (MAX.)
At operating
At standby
μ
PD444008LE-8
36-pin PLASTIC SOJ
8
200
10
μ
PD444008LE-10
(10.16 mm (400))
10
180
μ
PD444008LE-12
12
170
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