參數資料
型號: UPD444001LE-12
廠商: NEC Corp.
英文描述: 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT
中文描述: 4分位CMOS SRAM的快速分詞1位
文件頁數: 10/16頁
文件大?。?/td> 144K
代理商: UPD444001LE-12
10
μ
PD444001
Data Sheet M14947EJ4V0DS
Write Cycle Timing Chart 1 (/WE Controlled)
Cautions 1. /CS or /WE should be fixed to high level during address transition.
2. Do not input data to D
OUT
while D
OUT
is in the output state.
Remarks 1.
Write operation is done during the overlap time of a low level /CS and a low level /WE.
2.
When /WE is at low level, the D
OUT
pin is always high impedance. When /WE is at high level, read
operation is executed. Therefore /OE should be at high level to make the D
OUT
pin high impedance.
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