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參數(shù)資料
| 型號(hào)： | UPD44323362F1-C40-FJ1 |
| 廠商： | NEC Corp. |
| 英文描述： | 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
| 中文描述： | 32兆位CMOS同步快速靜態(tài)RAM的100萬(wàn)字的36位HSTL接口/寄存器間/晚寫(xiě) |
| 文件頁(yè)數(shù)： | 7/28頁(yè) |
| 文件大小： | 252K |
| 代理商： | UPD44323362F1-C40-FJ1 |
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7
Data Sheet M16379EJ4V0DS
μ
PD44323362
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Note
Supply voltage
V
DD
–0.5
+3.0
V
1
Output supply voltage
V
DD
Q
–0.5
+3.0
V
1
Input voltage
V
IN
–0.5
V
DD
+ 0.3 (3.0 V MAX)
V
1
Input / Output voltage
V
I/O
–0.5
V
DD
+ 0.3 (3.0 V MAX)
V
1
Junction temperature
T
j
5
110
°
C
Storage temperature
T
stg
–55
+125
°C
Note 1.
1.0 V MIN. (Pulse width 10% Tcyc)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (T
j
= 5 to 110
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Core supply voltage
V
DD
2.375
2.5
2.625
V
Output buffer supply voltage
V
DD
Q
1.4
1.9
V
Input reference voltage
V
REF
0.68
0.95
V
Low level input voltage
V
IL
–0.3
Note
V
REF
– 0.1
V
High level input voltage
V
IH
V
REF
+ 0.1
V
DD
Q + 0.3
V
Note
1.0 V MIN. (Pulse width 10% Tcyc)
Recommended AC Operating Conditions (T
j
= 5 to 110
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input reference voltage
V
REF (RMS)
–5%
+5%
V
Low level input voltage
V
IL
–0.3
V
REF
– 0.2
V
High level input voltage
V
IH
V
REF
+ 0.2
V
DD
Q + 0.3
V
Capacitance (T
A
Note
= 25
°
C, f = 1 MHz)
Parameter
Note
Symbol
Test conditions
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
6
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
7
pF
Clock input capacitance
C
clk
V
clk
= 0 V
7
pF
Note
T
A
= Operating ambient temperature
Remark
These parameters are sampled and not 100% tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD44324182BF5-E40-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:RENUPD44324182BF5-E40-FQ1-A 36M-BIT(2M-W |
| UPD44324185BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324362BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324362BF5-E40-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324365BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
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