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參數(shù)資料
| 型號： | UPD43256BGW-B15X-9JL |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 150 ns, PDSO28 |
| 封裝： | 8 X 13.40 MM, PLASTIC, TSOP1-28 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 269K |
| 代理商： | UPD43256BGW-B15X-9JL |
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MOS INTEGRATED CIRCUIT
μPD43256B-X
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
DATA SHEET
Document No. M11012EJ7V0DS00 (7th edition)
Date Published November 2008
Printed in Japan
1995
Description
The
μPD43256B-X is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
The
μPD43256B-X is an extended-operating-temperature version of the μPD43256B (X version : TA = –25 to +85°C).
And A and B versions are low voltage operations. Battery backup is available.
The
μPD43256B-X is packed in 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).
Features
32,768 words by 8 bits organization
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
Operating ambient temperature: TA = –25 to +85 °C
Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
Low VCC data retention: 2.0 V (MIN.)
/OE input for easy application
Part number
Access time
Operating supply Operating ambient
Supply current
ns (MAX.)
voltage
temperature
At operating
At standby
At data retention
V
°C
mA (MAX.)
μA (MAX.)
Note1
μPD43256B-xxX
70, 85
4.5 to 5.5
25 to +85
45
50
2
μPD43256B-AxxX
85
Note2, 100, 120 Note2
3.0 to 5.5
μPD43256B-BxxX
Note2
100, 150
Note2
2.7 to 5.5
40
Notes 1. TA
≤ 40 °C, VCC = 3.0 V
2. 100 ns (MAX.) (VCC = 4.5 to 5.5 V)
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