參數(shù)資料
型號(hào)： UPD43256BGW-B15-9JL
廠商： NEC Corp.
英文描述： 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
中文描述： 256K位CMOS靜態(tài)RAM 32K的詞8位
文件頁數(shù)： 7/24頁
文件大小： 174K
代理商： UPD43256BGW-B15-9JL
7
μ
PD43256B
DC Characteristics (Recommended operating conditions unless otherwise noted) (1/2)
Parameter
Symbol
Test conditions
μ
PD43256B-L
μ
PD43256B-LL
Unit
MIN. TYP. MAX. MIN. TYP. MAX.
Input leakage current
I
LI
V
IN
= 0 V to V
CC
–1.0
+1.0
–1.0
+1.0
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
CC
OE = V
IH
or CS = V
IH
or WE = V
IL
–1.0
+1.0
–1.0
+1.0
μ
A
Operating supply current
I
CCA1
CS = V
IL
, Minimum cycle time,
I
I/O
= 0 mA
45
45
mA
I
CCA2
CS = V
IL
, I
I/O
= 0 mA
10
10
I
CCA3
CS
≤
0.2 V, Cycle = 1 MHz,
I
I/O
= 0 mA
V
IL
≤
0.2 V, V
IH
≥
V
CC
– 0.2 V
10
10
Standby supply current
I
SB
CS = V
IH
3
3
mA
I
SB1
CS
≥
V
CC
– 0.2 V
1.0
50
0.5
15
μ
A
High level output voltage
V
OH1
I
OH
= –1.0 mA
2.4
2.4
V
V
OH2
I
OH
= –0.1 mA
V
CC
–0.5
V
CC
–0.5
Low level output voltage
V
OL
I
OL
= 2.1 mA
0.4
0.4
V
Remarks 1.
V
IN
: Input voltage
2.
These DC Characteristics are in common regardless of package types.
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