參數(shù)資料
型號: UPD43256BGW-A12-9JL
廠商: NEC Corp.
英文描述: 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
中文描述: 256K位CMOS靜態(tài)RAM 32K的詞8位
文件頁數(shù): 10/24頁
文件大?。?/td> 174K
代理商: UPD43256BGW-A12-9JL
10
μ
PD43256B
Read Cycle (1/2)
V
CC
4.5 V
μ
PD43256B-85
μ
PD43256B-A85/A10/A12
μ
PD43256B-B10/B12/B15
Parameter
Symbol
μ
PD43256B-70
Unit
Condition
MIN.
MAX.
MIN.
MAX.
Read cycle time
t
RC
70
85
ns
Address access time
t
AA
70
85
ns
Note 1
CS access time
t
ACS
70
85
ns
OE access time
t
OE
35
40
ns
Output hold from address change
t
OH
10
10
ns
CS to output in low impedance
t
CLZ
10
10
ns
Note 2
OE to output in low impedance
t
OLZ
5
5
ns
CS to output in high impedance
t
CHZ
30
30
ns
OE to output in high impedance
t
OHZ
30
30
ns
Notes 1.
See the output load shown in
Figure 1
except for
μ
PD43256B-A, 43256B-B.
2.
See the output load shown in
Figure 2
except for
μ
PD43256B-A, 43256B-B.
Remark
These AC characteristics are in common regardless of package types and L, LL versions.
Read Cycle (2/2)
V
CC
3.0 V
V
CC
2.7 V
Parameter
Symbol
μ
PD43256B-A85
μ
PD43256B-A10
μ
PD43256B-A12
μ
PD43256B-B10
μ
PD43256B-B12
μ
PD43256B-B15
Unit
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read cycle time
t
RC
85
100
120
100
120
150
ns
Address access time
t
AA
85
100
120
100
120
150 ns
Note
CS access time
t
ACS
85
100
120
100
120
150 ns
OE access time
t
OE
50
60
60
60
60
70
ns
Output hold from address change
t
OH
10
10
10
10
10
10
ns
CS to output in low impedance
t
CLZ
10
10
10
10
10
10
ns
OE to output in low impedance
t
OLZ
5
5
5
5
5
5
ns
CS to output in high impedance
t
CHZ
35
35
40
35
40
50
ns
OE to output in high impedance
t
OHZ
35
35
40
35
40
50
ns
Note
Loading condition is 1TTL + 100 pF.
Remark
These AC characteristics are in common regardless of package types and L, LL versions.
Con-
dition
相關(guān)PDF資料
PDF描述
UPD43256BGW-A12-9KL 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGW-A85-9JL 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGW-A85-9KL 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-B10 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-B12 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD43256BGW-B10X-9JL-A 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3.3V/5V 256K-Bit 32K x 8 100ns 28-Pin TSOP-I
UPD43256GU-15L 制造商:NEC Electronics Corporation 功能描述:Static RAM, 32Kx8, 28 Pin, Plastic, SOP
UPD434008ALLE-A15 制造商:NEC Electronics Corporation 功能描述:512K X 8 STANDARD SRAM, 15 ns, PDSO36
UPD44164182AF5-E37Y-EQ2-A 制造商:Renesas Electronics Corporation 功能描述:UPD44164182A Series 18 Mbit (1 M x 18 ) 270 MHz 0.3 ns DDRII SRAM - BGA-165
UPD44164182F5-E50-EQ1 制造商:Renesas Electronics Corporation 功能描述:UPD44164182 Series 18 Mb (1 M x 18 ) 200 MHz 5 ns DDRII SRAM - BGA-165