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參數資料
| 型號： | UPD43256BGW-A10-9KL |
| 廠商： | NEC Corp. |
| 英文描述： | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| 中文描述： | 256K位CMOS靜態(tài)RAM 32K的詞8位 |
| 文件頁數： | 15/24頁 |
| 文件大?。?/td> | 174K |
| 代理商： | UPD43256BGW-A10-9KL |
15
μ
PD43256B
Low V
CC
Data Retention Characteristics
L Version (
μ
PD43256B-L: T
A
= 0 to 70 C)
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
Data retention supply voltage
V
CCDR
CS
≥
V
CC
– 0.2 V
2.0
5.5
V
Data retention supply current
I
CCDR
V
CC
= 3.0 V, CS
≥
V
CC
– 0.2 V
0.5
20
Note
μ
A
Chip deselection to data
retention mode
t
CDR
0
ns
Operation recovery time
t
R
5
ms
Note
3
μ
A (T
A
≤
40 C)
LL Version (
μ
PD43256B-LL: T
A
= 0 to 70 C)
A Version (
μ
PD43256B-A: T
A
= 0 to 70 C)
B Version (
μ
PD43256B-B: T
A
= 0 to 70 C)
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
Data retention supply voltage
V
CCDR
CS
≥
V
CC
– 0.2 V
2.0
5.5
V
Data retention supply current
I
CCDR
V
CC
= 3.0 V, CS
≥
V
CC
– 0.2 V
0.5
7
Note
μ
A
Chip deselection to data
retention mode
t
CDR
0
ns
Operation recovery time
t
R
5
ms
Note
2
μ
A (T
A
≤
40 C), 1
μ
A (T
A
≤
25 C)
相關PDF資料 |
PDF描述 |
|---|---|
| UPD43256BGW-A12-9JL | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD43256BGW-A12-9KL | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD43256BGW-A85-9JL | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD43256BGW-A85-9KL | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD43256BGU-B10 | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPD43256BGW-A10X-9JL(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPD43256BGW-B10X-9JL-A | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3.3V/5V 256K-Bit 32K x 8 100ns 28-Pin TSOP-I |
| UPD43256GU-15L | 制造商:NEC Electronics Corporation 功能描述:Static RAM, 32Kx8, 28 Pin, Plastic, SOP |
| UPD434008ALLE-A15 | 制造商:NEC Electronics Corporation 功能描述:512K X 8 STANDARD SRAM, 15 ns, PDSO36 |
| UPD44164182AF5-E37Y-EQ2-A | 制造商:Renesas Electronics Corporation 功能描述:UPD44164182A Series 18 Mbit (1 M x 18 ) 270 MHz 0.3 ns DDRII SRAM - BGA-165 |
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