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參數(shù)資料
| 型號： | UPD178P018GC |
| 廠商： | NEC Corp. |
| 英文描述： | CAT5E PATCH CABLES SNAGLESS,GREEN, 6 FT |
| 中文描述： | 8位單片機(jī) |
| 文件頁數(shù)： | 42/52頁 |
| 文件大?。?/td> | 247K |
| 代理商： | UPD178P018GC |
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42
Data Sheet U12920EJ1V0DS00
μ
PD178F098
Flash Memory Programming Characteristics (V
DD
= 3.5 to 5.5 V, T
A
= 10 to 40
°
C)
(1) Write/delete characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Write current (V
DD
pin)
Note
t
DDW
When V
PP
= V
PP1
, f
X
= 6.3 MHz
23
mA
Write current (V
PP
pin)
Note
I
PPW
When V
PP
= V
PP1
, f
X
= 6.3 MHz
20
mA
Delete current (V
DD
pin)
Note
I
DDE
When V
PP
= V
PP1
, f
X
= 6.3 MHz
23
mA
Delete current (V
PP
pin)
Note
I
PPE
When V
PP
= V
PP1
100
mA
Unit delete time
t
ER
0.5
1
1
s
Total delete time
t
ERA
20
s
Number of overwrite
C
WRT
Delete and write are counted as one cycle
20
times
V
PP
power supply voltage
V
PP0
In normal mode
0
0.2 V
DD
V
V
PP1
At flash memory programming
9.7
10.0
10.3
V
Note
AV
DD
current and Port current (current flowing to internal pull-up resistor) are not included.
Remark
f
X
: System clock oscillation frequency
(2) Serial write operation characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
PP
setup time
t
PSRON
V
PP
high voltage
1.0
μ
s
V
PP
↑
setup time from V
DD
↑
t
DRPSR
V
PP
high voltage
1.0
μ
s
RESET
↑
setup time from V
PP
↑
t
PSRRF
V
PP
high voltage
1.0
μ
s
V
PP
count start time from RESET
↑
t
RFCF
1.0
μ
s
Count execution time
t
COUNT
2.0
ms
V
PP
counter high-level width
t
CH
8.0
μ
s
V
PP
counter low-level width
t
CL
8.0
μ
s
V
PP
counter noise elimination width
t
NFW
40
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD178P018GC-3B9 | 制造商:NEC 制造商全稱:NEC 功能描述:8-BIT SINGLE-CHIP MICROCONTROLLER |
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