參數(shù)資料
型號(hào): UPA871TD-T3
英文描述: TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | TSOP
中文描述: 晶體管|晶體管|一對(duì)|叩| 5.5VV(巴西)總裁| 100mA的一(c)|的TSOP
文件頁(yè)數(shù): 3/16頁(yè)
文件大小: 87K
代理商: UPA871TD-T3
Data Sheet P15361EJ1V0DS
3
μ
PA871TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25
°
C)
300
250
200
150
100
50
0
25
50
75
100
125
150
T
t
Ambient Temperature T
A
(C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy Board
(1.08 cm
×
1.0 mm (t) )
2 Elements in total
Per Element
R
r
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
f = 1 MHz
V
CE
= 1 V
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
10
20
0
4
2
6
8
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
= 20 A
40 A
100 A
80 A
60 A
140 A
160 A
180 A
200 A
120 A
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