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參數(shù)資料
| 型號(hào)： | UPA872TD |
| 英文描述： | Discrete |
| 中文描述： | 離散 |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 87K |
| 代理商： | UPA872TD |
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DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15361EJ1V0DS00 (1st edition)
Date Published April 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TWIN TRANSISTOR
μ
PA871TD
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
FEATURES
Built-in low voltage operation, low phase distortion transistor suited for OSC operation
f
T
= 5.0 GHz TYP.,
S
21e
Built-in 2 transistors (2
×
2SC5600)
6-pin lead-less minimold package
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5600
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA871TD
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA871TD-T3
10 kpcs/reel
Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
5.5
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
tot
Note
190 in 1 element
210 in 2 elements
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy substrate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA872TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-363VAR |
| UPA873TC | Discrete |
| UPA873TD | Discrete |
| UPA891TC | Discrete |
| UPA891TD | TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-363VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA872TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-363VAR |
| UPA873TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA873TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA880TS | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) |
| UPA880TS-T3 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) |
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