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參數(shù)資料
| 型號： | UPA851TD |
| 英文描述： | Discrete |
| 中文描述： | 離散 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大?。?/td> | 172K |
| 代理商： | UPA851TD |
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DATA SHEET
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this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TWIN TRANSISTOR
μ
PA850TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
Document No. PU10096EJ01V0DS (1st edition)
Date Published February 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
FEATURES
Low voltage operation
2 different built-in transistors (2SC5435, 2SC5736)
Q1: High gain transistor
f
T
= 12.0 GHz TYP.,
S
21e
Q2: Low phase distortion transistor suited for OSC applications
f
T
= 5.0 GHz TYP.,
S
21e
6-pin lead-less minimold package
2
= 8.5 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
2
= 4.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1
Q2
3-pin thin-type ultra super minimold part No.
2SC5435
2SC5736
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA850TD
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA850TD-T3
10 kpcs/reel
Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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| UPA858TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR |
| UPA859TD | Discrete |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA854TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA854TD(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA855TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA858TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR |
| UPA858TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR |
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