參數(shù)資料
型號: UPA834TF
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
中文描述: NPN硅外延晶體管,2個(gè)不同的元素,采用6引腳薄型模具迷你小包裝
文件頁數(shù): 6/12頁
文件大?。?/td> 68K
代理商: UPA834TF
6
μ
PA834TF
15
10
5
00.5
1
5
10
50
I
S
2
|
2
d
Collector current I
C
(mA)
V
= 3 V
f = 1 GHz
Insertion Power Gain vs. Collector Current
Insertion Power Gain vs. Collector Current
15
Q1
Q2
25
20
15
10
5
0
0.1
0.2
0.5
1.0
2.0
5.0
Frequency f (GHz)
I
S
2
|
2
d
Insertion Power Gain vs. Frequency
Insertion Power Gain vs. Frequency
V
CE
= 3V
I
C
= 7 mA
5
3
4
2
1
0
0.5
1.0
5.0
10
50
V
CE
= 3 V
f = 1 GHz
Collector current
I
C
(mA)
N
N
Noise Figure vs. Collector Current
10
5
00.5
1
5
10
50 100
I
S
2
|
2
d
Collector current I
C
(mA)
V
CE
= 3 V
f = 1.0 GH
Z
24
20
16
12
8
4
00.1
0.2
0.5
1.0
2.0
5.0
Frequency f (GHz)
I
S
2
|
2
d
V
CE
= 3V
I
C
= 7 mA
Noise Figure vs. Collector Current
6
4
2
0
0.5 1.0
5.0
10
50
100
V
CE
= 3 V
f = 1 GH
Z
Collector current
I
C
(mA)
N
N
相關(guān)PDF資料
PDF描述
UPA834TF-T1 NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
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UPA835TF-T1 NPN SILICON EPITAXIAL TWIN TRANSISTOR
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