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參數(shù)資料
| 型號(hào)： | UPA834TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| 中文描述： | NPN硅外延晶體管，2個(gè)不同的元素，采用6引腳薄型模具迷你小包裝 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | UPA834TF-T1 |
2
μ
PA834TF
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
RATING
Q1
Q2
Collector to base voltage
V
CBO
20
20
V
Collector to emitter voltage
V
CEO
10
12
V
Emitter to base voltage
V
EBO
1.5
3
V
Collector current
I
C
65
100
mA
Total power dissipation
P
T
150 in 1 element
150 in 1 element
mW
200 in 2 elements
Note
Junction temperature
T
j
150
150
°
C
Storage temperature
T
stg
65 to +150
°
C
Note
110 mW must not be exceeded for 1 element.
(1) Q1
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector cutoff current
I
CBO
V
CB
= 10 V, I
E
= 0
0.8
μ
A
Emitter cutoff current
I
EBO
V
EB
= 1 V, I
C
= 0
0.8
μ
A
DC current gain
h
FE
V
CE
= 3 V, I
C
= 7 mA
Note 1
70
150
Gain bandwidth product
f
T
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
4.5
7.0
GHz
Feedback capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.45
0.9
pF
Insertion power gain
|
S
21e
|
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
10
12
dB
Noise figure
NF
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
1.4
2.7
dB
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
UNIT
SYMBOL
PARAMETER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA835 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA835TF | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA835TF-T1 | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA835TC-T1 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA835TC | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA835 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA835TC | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA835TC-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA835TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA835TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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