參數(shù)資料
型號: UPA833TF-T1
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
中文描述: NPN硅外延晶體管,2個不同的元素,采用6引腳薄型模具迷你小包裝
文件頁數(shù): 6/16頁
文件大?。?/td> 74K
代理商: UPA833TF-T1
6
μ
PA833TF
Collector current I
C
(mA)
N
Noise Figure vs. Collector Current
V
CE
= 1 V
1
2
3
5
1
2
3
7
10
f = 1 GH
Z
f = 2 GH
Z
Feedback Capacitance vs. Collector to Base Voltage
Collector to base voltage V
CB
(V)
F
r
5
10
1
0.5
1.0
f = 1 MH
Z
20
0.1
M
I
2
Frequency f (GH
Z
)
Maximum Available Gain, Insertion Power Gain vs. Frequency
V
= 1 V
I
C
= 5 mA
V
CE
= 3 V
I
C
= 10 mA
0
0.1
0.5
1
5
10
20
30
S
21e 2
MAG
f = 2 GHz
V
CE
= 3 V
N
Collector current I
C
(mA)
4
3
2
1
0
0.5
50
1
2
5
10
20
Noise Figure vs. Collector Current
Collector to base voltage V
CB
(V)
F
r
0.6
0.5
0.4
0.3
0.2
0.5
20
1
2
5
10
f = 1 MHz
Feedback Capacitance vs. Collector to Base Voltage
25
20
15
10
5
0
0.2
0.5
1
2
5
Maximum Available Gain, Insertion Power Gain vs. Frequency
Frequency f (GH
Z
)
0.1
S
21e
2
MAG
M
I
2
Q1
Q2
相關PDF資料
PDF描述
UPA834TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
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UPA835TF-T1 NPN SILICON EPITAXIAL TWIN TRANSISTOR
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