參數(shù)資料
型號: UPA833TF-T1
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
中文描述: NPN硅外延晶體管,2個不同的元素,采用6引腳薄型模具迷你小包裝
文件頁數(shù): 5/16頁
文件大小: 74K
代理商: UPA833TF-T1
5
μ
PA833TF
Collector current I
C
(mA)
D
F
0.1 0.2
1
0.5
10 20
50
2
5
100
200
V
CE
= 1 V
100
0
DC Current Gain vs. Collector Current
Collector current I
C
(mA)
G
T
Z
)
f = 2 GH
Z
V
CE
= 1 V
5
10
0
1
2
3
5
7
10
Gain Bandwidth Product vs. Collector Current
Collector current I
C
(mA)
f = 2 GH
Z
V
CE
= 1 V
5
10
0
1
2
3
5
7
10
Insertion Power Gain vs. Collector Current
DC Current Gain vs. Collector Current
200
0.1
100
0
0.5
1
5
10
50 100
5 V
D
F
Collector current I
C
(mA)
0.2
2
20
V
CE
= 3 V
14
0.5
12
10
8
6
4
2
1
2
5
10
50
Collector current I
C
(mA)
G
T
Z
)
Gain Bandwidth Product vs. Collector Current
20
f = 2 GHz
V
CE
= 1 V
5 V
3 V
I
2
2
I
2
2
Collector current I
C
(mA)
10
0.5
8
6
4
2
5
10
50
20
2
V
CE
= 1 V
f = 2 GHz
5 V
3 V
Insertion Power Gain vs. Collector Current
Q1
Q2
相關(guān)PDF資料
PDF描述
UPA834TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
UPA834TF-T1 NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
UPA835 NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
UPA835TF NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA835TF-T1 NPN SILICON EPITAXIAL TWIN TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA834TF 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
UPA834TF_99 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR
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UPA835 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
UPA835TC 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE